gallium nitride package

  • Gallium Nitride Power Transistors Priced Cheaper Than

    May 08, 2015Efficient Power Conversion says gallium nitride's day has come. Also crucial to driving down cost, Lidow says, is the company's transistor architecture: It has all the electrical connections (source, drain, and gate) on one side of the device, making it easily mountable on a printed circuit board.

    Free Chat →
  • MACOM Gallium Nitride (GaN)

    Gallium Nitride (GaN) and RF (Radio Frequency) Energy applications are on the cusp of transforming the industrial market. We have examined how GaN has changed cooking, plasma lighting and medical processes, and in part four of our RF Energy in Daily Life series, we are going to look at GaN for industrial heating and drying.

    Free Chat →
  • Gallium Nitride (GaN)

    Introduction: Gallium Nitride (GaN) has high thermal conductivity and strong anti-irradiation. It is not only a short-wavelength optoelectronic material, but also a replacement material for high-temperature semiconductor devices.

    Free Chat →
  • Mono and Stereo High

    The Gallium Nitride power MOSFETS used in the GaNTubeTM power stage, simplifies this challenge through its ability to efficiently switch at much higher slew rates than any silicon based power MOSFET, with almost perfect (book-like) behavior and oscillation free switching.

    Free Chat →
  • Mono and Stereo High

    Thanks to the Gallium-Nitride power stage intrinsic characteristics, the virtually stray-inductance free package, and a state of the art layout of the power module, the rise time and fall time of the Vivace's GaNTubeTM power stage are fully symmetrical at ~15ns.

    Free Chat →
  • CGHV37400F, 400W, S

    Cree's CGHV37400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV37400F ideal for 3.5 - 3.7 GHz S-Band radar amplifier applications. The transistor is matched to 50-ohms on the input and 50-ohms on the output. The

    Free Chat →
  • A New Package of High

    A New Package of High-Voltage Cascode Gallium Nitride Device for High-Frequency Applications Fred C. Lee, Wenli Zhang, Xiucheng Huang, Zhengyang Liu, Weijing Du, and Qiang Li

    Free Chat →
  • Infineon

    Infineon adds GaN (gallium nitride) to its power portfolio. CoolGaN™ and GaN EiceDRIVER™ ICs: Cutting-edge performance with excellent reliability. The next essential step towards an energy-efficient world lies in the use of new materials and technologies.

    Free Chat →
  • Silicon Carbide and Gallium Nitride Package Assembly at

    Silicon Carbide and Gallium Nitride Package Assembly at Team Pacific Corporation Silicon Carbide (SiC) Gallium Nitride (GaN) are new chip technologies that are currently gaining attraction in the industry.

    Free Chat →
  • Gallium Nitride (GaN) Technology

    Gallium Nitride (GaN) is a direct band gap semiconductor, with a wide band gap of 3.4 eV (electronvolt), 2.4x wider than Gallium Arsenide (GaAs) and 3x wider than Silicon. This makes GaN better suited for high-power and high-frequency devices, as it derives lower switching and conduction losses.

    Free Chat →
  • A new package of high

    May 06, 2015A new package of high-voltage cascode gallium nitride device for high-frequency applications Abstract: Lateral gallium nitride (GaN)-based high-electron-mobility transistor (HEMT) power devices have high current density, high switching speed, and low on-resistance in comparison to the established silicon (Si)-based semiconductor devices.

    Free Chat →
  • Infineon Gallium Nitride Power Devices

    Jan 28, 2019Infineon adds GaN (Gallium Nitride) to its power portfolio: CoolGaN™ and GaN EiceDRIVER™ ICs. The next essential step towards an energy-efficient world lies in the use of new materials and technologies. Wide bandgap semiconductors enable greater power efficiency, smaller size, lighter weight, lower cost, or all together.

    Free Chat →
  • IEEE TRANSACTIONS ON COMPONENTS, PACKAGING AND

    amplifiers [2], [3]. Gallium nitride high-electron-mobility transistor (GaN HEMT) technology has received special atten-tion, with a focus on limits posed by thermal resistances at the device, substrate, package, and system levels [4]–[7]. Companies will select advanced HEMT cooling technologies

    Free Chat →
  • Thermal and Thermomechanical Modeling to Design a

    Gallium oxide devices have the potential to offer comparable or even superior performance than other wide-bandgap devices, but at a much lower cost. Recent breakthroughs include demonstration of a laboratory-scale gallium oxide transistors and diodes; however, a functional power electronics package for these devices is yet to be developed.

    Free Chat →
  • Gallium Nitride Based Active Electronically Scanned Array

    Apr 24, 2013Gallium Nitride Based Active Electronically Scanned Array (AESA) Technology for High Altitude Periscope Detection. A main objective is to design a compact T/R MMIC system that performs all these functions in one small package to enable a very thin flat 2D Active Electronically Scanned Array (AESA) at C-band.

    Free Chat →
  • Simulation Model Development for Packaged Cascode Gallium

    This paper presents a simple behavioral model with experimentally extracted parameters for packaged cascode gallium nitride (GaN) field-effect transistors (FETs). This study combined a level-1 metal–oxide–semiconductor field-effect transistor (MOSFET), a junction field-effect transistor (JFET), and a diode model to simulate a cascode GaN FET, in which a JFET was used to simulate a metal

    Free Chat →
  • First principal study on optical properties of carbon and

    Sep 01, 2013In this work, we study electronic and optical properties of two (5,5) armchair carbon nanotube (CNT) and gallium nitride nanotube (GaNNT) using fully self-consistence density functional theory (DFT) based calculations as implemented in SIESTA package. The generalized gradient approximation (GGA) is considered for the exchange-correlation functional.

    Free Chat →
  • SGF48N10S1

    • 4th Generation Gallium Nitride Technology • Exceptionally Low RDSon • Low Qg Simplifies Gate Drive Circuit • Very Fast Switching for High-Freq. Applications • Low Thermal Resistance • Hermetically Sealed Package • Availa

    Free Chat →
  • Simulation Model Development for Packaged Cascode

    Gallium nitride (GaN) field-effect transistors (FETs) exhibit high performance levels that render them suitable for high-switching, high-temperature applications. However, using GaN in power design fields involves certain design challenges [1]. To assist designers in the switching power

    Free Chat →
  • GaN HEMTs

    GaN HEMTs. Qorvo offers a broad portfolio of gallium nitride (GaN) discrete transistor products with varying levels of power, voltage and frequency ratings, in both die-level and packaged solutions. Our products provide the high performance of GaN plus the convenience of industry-standard packaging, which speeds design and manufacturing — all backed

    Free Chat →
  • Simulation Model Development for Packaged Cascode

    Gallium nitride (GaN) field-effect transistors (FETs) exhibit high performance levels that render them suitable for high-switching, high-temperature applications. However, using GaN in power design fields involves certain design challenges [1]. To assist designers in the switching power

    Free Chat →
  • GaN Power Devices: Potential, Benefits, and Keys to

    GaN Power Devices: Potential, Benefits, and Keys to Successful Use By Bill Schweber for Mouser Electronics For well over a decade, industry experts and analysts have been predicting that viable power-switching devices based on gallium nitride (GaN) technology were "just around the corner." These GaN-based switches would offer greater efficiency, power handling, and other performance

    Free Chat →
  • Gallium Nitride Power Transistors Priced Cheaper Than

    May 08, 2015Last week, El Segundo, Calif.-based Efficient Power Conversion, announced that it's offering two types of power transistors made from gallium nitride that it has priced cheaper than their

    Free Chat →
  • Gallium Nitride RF Technology Advances and Applications

    Gallium nitride device technology has been the focus of intense development in the commercial space for the last decade. The advantages of AlGaN/GaN HFET's for RF applications arise from the GaN's high breakdown field strength and high electron sheet density. Table 1 compares the electronic and thermal properties of GaN to Si and GaAs. As

    Free Chat →
  • GaN HEMTs

    GaN HEMTs. Qorvo offers a broad portfolio of gallium nitride (GaN) discrete transistor products with varying levels of power, voltage and frequency ratings, in both die-level and packaged solutions. Our products provide the high performance of GaN plus the convenience of industry-standard packaging, which speeds design and manufacturing — all backed

    Free Chat →
  • Infineon Technologies : Gallium nitride solutions from

    Munich, Germany - 13 November 2018 - At electronica 2018 Infineon Technologies AG showcases the benefits of its gallium nitride solutions: CoolGaN™ 600 V e

    Free Chat →
  • Get Price And Support

    Simply complete the form below, click submit, you will get the price list and a Hmard representative will contact you within one business day. Please also feel free to contact us by email or phone. ( * Denotes a required field).